• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A wire in a semiconductor device and the fabricating the same are disclosed in the present invention. A semiconductor device includes a semiconductor substrate, a plurality of conductive layers on the semiconductor substrate, and an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer.
    公开号:US20010003379A1
    申请号:US09/216,874
    申请日:1998-12-21
    公开日:2001-06-14
    发明作者:Won Cheul Seo
    申请人:Hynix Semiconductor Inc；
    IPC主号:H01L23-5329
    专利说明:
    [0001] This application claims the benefit of Korean Application No. 97-80698 filed Dec. 31, 1997, which is hereby incorporated by reference. [0001] BACKGROUND OF THE INVENTION
    [0002] 1. Field of the Invention [0002]
    [0003] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device and a method of fabricating the same. Although the present invention is suitable for a wide scope of applications, it is particularly suitable for reducing a parasitic capacitance between data lines. Accordingly, a DRAM (Dynamic Random Access Memory) device having a stable performance and an improved data sensing capability is fabricated in the present invention. [0003]
    [0004] 2. Discussion of the Related Art [0004]
    [0005] In a semiconductor device, aluminum is a choice of material for interconnection between gate electrodes, source/drain regions, and electrical contacts. [0005]
    [0006] Generally, a wiring characteristic is deteriorated with a reduction in a device dimension or a power source. For example, in a gate electrode, a signal transmission is delayed due to a resistance increase. An operation speed is thus decreased. Also, a current intensity of an electrical contact is increased due to the resistance increase, thereby degrading a reliability of a wiring in the device. As a result, the increases in resistance and the current intensity cause an electromigration, which significantly degrades the reliability of the wiring in the device. Particularly in submicron devices, a RC (resistance-capacitance) transmission is delayed because a wiring resistance and a capacitance are increased due to micronization and reduction in a wiring pitch. [0006]
    [0007] A metal wiring in a semiconductor device according to a background art will be explained with reference to the attached drawings. FIG. 1 is a cross-sectional view illustrating the background art semiconductor device. FIGS. 2A to [0007] 2E are cross-sectional views showing the process steps of fabricating method of the background art semiconductor device. FIG. 3 is a circuit diagram of the background art semiconductor device.
    [0008] In the DRAM, wordlines applying driving signals to cell transistors and bitlines applying data signals to cell capacitors are arranged to cross each other to have a higher integration. The background art semiconductor device will be explained with an emphasis on a conductive layer pattern (bitline). [0008]
    [0009] Initially referring to FIG. 1, the background art semiconductor device is provided with a conductive layer pattern [0009] 12 on a semiconductor substrate 10 having cell transistors. The conductive layer pattern 12 is connected to source/drain of the cell transistors or another conductive layers. A first insulating layer 13 is formed on the semiconductor substrate 10 including the conductive layer pattern 12, and a second insulating layer 14 for planarizing the device. An insulating layer 11, such as oxide, is provided between the conductive layer pattern 12 and the semiconductor substrate 10 for insulating the conductive pattern 12 from other regions.
    [0010] A method of forming the aforementioned background art semiconductor device will be explained as follows. [0010]
    [0011] Initially referring to FIG. 2A, an insulating layer [0011] 11 a is formed on a semiconductor substrate 10 having cell transistors or another conductive layers formed thereon. A conductive layer 12 a is formed on the insulating layer 11 a for a metal line.
    [0012] As shown in FIG. 2B, the conductive layer [0012] 12 a and the insulating layer 11 a are selectively etched to form a conductive layer pattern 12 and a first insulating layer pattern 11, respectively.
    [0013] In FIG. 2C, a second insulating layer [0013] 13, such as oxide, is formed on the semiconductor substrate 10 including the conductive layer pattern 12 and the first insulating layer 11.
    [0014] A layer [0014] 14 a having a good insulating characteristic and a fluidity, such as an SOG (spin on glass) layer, is formed over the semiconductor substrate in FIG. 2D. In this process, the layer 14 a is formed to completely fill the spaces between each conductive layer pattern 12 on the second insulating layer 13.
    [0015] Thereafter, the layer [0015] 14 a is subjected to an anisotropic etching to expose an upper surface of the second insulating layer 13, thereby completing a semiconductor device having a third insulating layer 14, as shown in FIG. 2E.
    [0016] However, the semiconductor device fabricated by the aforementioned method has a parasitic capacitance Cb between the second and third insulating layers [0016] 13 and 14. Generally, the second and third insulating layers 13 and 14, such as oxide, have a dielectric constant of about 3.85.
    [0017] A reading operation of the background art semiconductor device will be explained with reference to FIG. 3. [0017]
    [0018] A unit cell of a DRAM is provided with a cell transistor T[0018] 1, a cell capacitor Cs having one electrode connected to a ground terminal and another electrode connected to one of electrodes of source/drain in the cell transistor T1. An S/A (sensing amplifier) for sensing and amplifying data in the cell through a bitline BL connected to one of the electrode of the source/drain in the cell transistor T1 to output signals. As shown in FIG. 3, the aforementioned unit cell generates a parasitic capacitance Cb (bitline parasitic capacitance) during reading operation in the second and third insulating layers 13 and 14 between one side of the cell transistor T1 and the S/A.
    [0019] In reading data from the DRAM, when a voltage is applied to a wordline W/L through a gate of the cell transistor T[0019] 1 after a Vd/2 is precharged to the bitline B/L, the Vd/2 is also applied to the parasitic capacitance Cb. Upon applying the voltage to the wordline W/L to turn on the cell transistor T1, a charge in the cell capacitor Cs changes a voltage of the bitline B/L by Vs=(Vd/2)/(1+Cb/Cs). Thereafter, the sensing amplifier S/A compares voltages of the bitline B/L and a bitbarline {overscore (B)}/{overscore (L)} to output the compared value after amplifying the value. Vd, Cb, and Cs denote a voltage of a power source, a parasitic capacitance of the bitline, and a capacitance of the cell capacitor C1, respectively.
    [0020] In order to have the Vs at least higher than 100 mV, both the Vd and the Cs should be increased, while the Cb should be decreased. However, there is a maximum value for Vd due to limitations in a transistor size and a low power consumption. Therefore, by reducing the Cb value, a data sensing capability can be much improved in the device. For instance, a dielectric constant of the second and third insulating layers [0020] 13 and 14, such as oxide, between the conductive layer patterns 12 (bitlines) in the background art is about 3.85. The parasitic capacitance Cb may be represented as (εS)/d, where ε is a dielectric constant of oxide, S is an area of the bitline, and d is a distance between the bitlines, respectively. Accordingly, the parasitic capacitance in the background art may be represented as Cb=(3.85×S)/d.
    [0021] In a wiring in a semiconductor device according to the background art, a parasitic capacitance by the oxide layer between bitlines degrades a data sensing capability of the device. Since the parasitic capacitance is generated from a dielectric constant of oxide itself, it can be reduced by increasing both the source power voltage Vd and the capacitance of the cell capacitor Cs. [0021]
    [0022] However, an increase in the source power voltage Vd is limited by size of the device and power consumption. Also, an increase in a cell capacitance is problematic because a fabricating process becomes complicated. Further, a reduction of the parasitic capacitance Cb is also practically impossible because of a dielectric constant of oxide. [0022] SUMMARY OF THE INVENTION
    [0023] Accordingly, the present invention is directed to a semiconductor device and a method of fabricating the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art. [0023]
    [0024] An object of the present invention is to provide a wiring in a semiconductor device and a method of fabricating the same, in which a parasitic capacitance between conductive patterns is reduced for providing a stable operation of the device. [0024]
    [0025] Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. [0025]
    [0026] To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a wiring in a semiconductor device includes a semiconductor substrate, a plurality of conductive layer patterns on the semiconductor substrate, an insulating film on the semiconductor substrate and the conductive layer pattern, and at least one void in the insulating film between the conductive layer patterns adjacent to each other. [0026]
    [0027] In another aspect of the present invention, there is provide a method for fabricating a wiring in a semiconductor device includes the steps of providing a semiconductor substrate, forming a plurality of conductive layer patterns on the semiconductor substrate, and forming an insulating film having at least one void therein on the semiconductor substrate and the conductive layer pattern and between the conductive layer patterns adjacent to each other. [0027]
    [0028] In another aspect of the present invention, a semiconductor device includes a semiconductor substrate, a plurality of conductive layers on the semiconductor substrate, and an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer. [0028]
    [0029] In another aspect of the present invention, a method of fabricating a semiconductor device having a semiconductor substrate includes the steps of forming a plurality of conductive layers on the semiconductor substrate, and forming an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer. [0029]
    [0030] In a further aspect of the present invention, a method of fabricating a semiconductor device having a semiconductor substrate includes the steps of forming a plurality of conductive layers on the semiconductor substrate, forming an insulating layer on the semiconductor substrate including the conductive layers, forming a nitride layer on the insulating layer, forming an insulating interlayer on the nitride layer, removing the insulating interlayer to expose an upper surface of the nitride layer, forming a hemi-spherical grain silicon layer on the insulating interlayer including the upper surface of the nitride layer, selectively removing the insulating interlayer using the hemi-spherical grain silicon layer as a mask to form a plurality of void in the insulating interlayer, and forming a planarization layer on the insulating interlayer including the nitride layer. [0030]
    [0031] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. [0031] BRIEF DESCRIPTION OF THE DRAWINGS
    [0032] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention: [0032]
    [0033] In the drawings: [0033]
    [0034] FIG. 1 is a cross-sectional view illustrating a semiconductor device in accordance with a background art; [0034]
    [0035] FIGS. 2A to [0035] 2E are cross-sectional views showing the process steps of fabricating method of the background art semiconductor device;
    [0036] FIG. 3 is an equivalent circuit diagram of the background art semiconductor device during a reading operation; [0036]
    [0037] FIG. 4 is a cross-sectional view of a semiconductor device in accordance with a first embodiment of the present invention; [0037]
    [0038] FIGS. 5A to [0038] 5E are cross-sectional views showing the process steps of fabricating method of a semiconductor device in accordance with the first embodiment of the present invention;
    [0039] FIG. 6 is a cross-sectional view of a semiconductor device in accordance with a second embodiment of the present invention; and [0039]
    [0040] FIGS. 7A to [0040] 7F are cross-sectional views showing the process steps of fabricating method of a semiconductor device in accordance with the second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
    [0041] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. FIG. 4 is a cross-sectional view of a semiconductor device in accordance with a first embodiment of the present invention while FIGS. 5A to [0041] 5E are cross-sectional views showing the process steps of fabricating method of the semiconductor device in accordance with the first embodiment of the present invention.
    [0042] A parasitic capacitance generated in the insulating layers between conductive lines is suppressed in the semiconductor device of the present invention. The parasitic capacitance in the semiconductor device of the present invention is much more reduced by lowering a dielectric constant itself than that of the background art semiconductor where insulating layer are filled in the spaces between conductive line patterns. Now, a semiconductor device according to a first embodiment of the present invention will be explained as follows. [0042]
    [0043] Referring to FIG. 4, a semiconductor device in accordance with the first embodiment of the present invention includes a first insulating film [0043] 41 on a semiconductor substrate 40 having cell transistors. A conductive layer pattern 42 is formed on the first insulating film 41. A second insulating film 43 is formed on the semiconductor substrate 40 including the conductive layer pattern 42. The second insulating film 43 has overhangs between the conductive layer patterns 42 to form a void 44 below the overhangs. A third insulating film 45 is formed on the second insulating film 43 to planarize the semiconductor device. The void 44 formed in the second insulating film 43 between the conductive layer patterns 42 below the overhangs is filled with air.
    [0044] A method of fabricating the semiconductor device having the aforementioned wiring in accordance with the first embodiment of the present invention will be explained with reference with the attached drawings. [0044]
    [0045] Initially referring to FIG. 5A, an insulating material layer [0045] 41 a is formed on an semiconductor substrate 40 having cell transistors and other conductive layers. Then, a conductive material layer 42 a (a bitline in a DRAM) for a metal line is formed on the insulating material layer 41 a.
    [0046] As shown in FIG. 5B, the conductive material layer [0046] 42 a and the insulating material layer 41 a are subjected to selective etching to form a conductive layer pattern 42 and a first insulating film 41.
    [0047] Thereafter, a second insulating film [0047] 43, such as oxide, is formed on the semiconductor substrate 40 having the conductive layer pattern 42 including the first insulating film 41, as shown in FIG. 5C. In this process, the second insulating film 43 is formed to have overhangs between the adjacent conductive layer patterns, thereby forming a void 44 below the overhangs. Air is naturally trapped in the void 44.
    [0048] In the process of forming the second insulating film [0048] 43, an oxide film is formed by a delta-N2O process to have a poor side step coverage. Generally, the delta-N2O process is used for improving a flatness of an interlayer insulating film for a device with a dimension below 0.35 μm. By using the delta-N2O process, an insulating film with overhangs is formed, so that the side step coverages of metal lines become poor. The spaces between the metal lines are filled with a material having an excellent fluidity, such as SOG. The process is used mostly in improving a flatness by preventing formation of recesses in the SOG layer in the middle of metal wiring when the metal wiring has a large gap. The delta-N2O process is an oxide film formation process by a thermal decomposition using TEOS (Tetra-Ethyl-Ortho-Silicate)/O2/N2O in stead of TEOS/O2 for forming an oxide film on the wiring lines. When an oxide film is formed by thermal decomposition using TEOS/O2/N2O, the overhangs are prone to be formed at the upper portion of the hole due to a poor side step coverage created by N2O gas. In the first embodiment of the present invention, because of the overhangs at the upper portion of the hole, a void 44 is formed in the second insulating film 43 and air having a dielectric constant 1 is trapped in the void 44.
    [0049] After forming the second insulating film [0049] 43 with a void 44, as shown in FIG. 5D, a third insulating material layer 45 a is formed on the surface over the semiconductor substrate 40 to an enough thickness to fill the spaces between the conductive lines 42.
    [0050] In FIG. 5E, the third insulating material layer [0050] 45 a is subjected to anisotropic etching, so that the third insulating material layer 45 a remains only on the recesses of the second insulating film 43 to form a third insulating film 45, thereby planarizing the semiconductor device. The third insulating material layer 45 a are mainly formed on the overhung portions of the second insulating film 43. Alternatively, a tilt deposition process instead of the delta-N2O process may be used in forming the second insulating film 43.
    [0051] A second embodiment of the present invention will be described with reference to the attached drawings. FIG. 6 illustrates a cross-sectional view of a semiconductor device in accordance with a second embodiment of the present invention. FIGS. 7A to [0051] 7F are cross-sectional views showing the process steps of fabricating method for a semiconductor device in accordance with the second preferred embodiment of the present invention. In the second embodiment, a HSG (hemi-spherical grain) process is used to form a void filled with air in an insulating film between the conductive layer patterns.
    [0052] Initially referring to FIG. 6, the semiconductor device in accordance with the second embodiment of the present invention includes a first oxide film [0052] 62 a formed on a semiconductor substrate 60 having cell transistors. A conductive layer pattern 61 is formed on the first oxide film 62 a. A second oxide film 62 b and a nitride film 63 formed in this order on the conductive layer pattern 61 including the semiconductor substrate 60. A third oxide film 62 c having a plurality of vertical pass-through voids 65 between the conductive layer patterns 61 are formed on the nitride film 63 a except for the top surface. A fourth oxide film 62 d formed on the entire surface including the third oxide film 62 c for planarizing the device.
    [0053] The vertical pass-through holes in the third oxide film [0053] 62 c are formed to have irregular sizes and positions. The holes are sealed by the nitride film 63 at the lower side of the holes and the fourth oxide film 62 d at the upper side. The inside of the holes is naturally filled with air. The voids 65 has a diameter in the range of 250 to 1000 Å.
    [0054] A method of fabricating the semiconductor device in accordance with the second embodiment of the present invention will be described as follows. [0054]
    [0055] Referring to FIG. 7A, a first oxide film [0055] 62 a is initially formed on a semiconductor substrate 60 having cell transistors or other conductive layers. A conductive material layer (bitline in a DRAM) for a metal line is then formed on the first oxide film 62 a. The conductive material layer and the first oxide film 62 a are subjected to selective etching to form a conductive layer pattern 61.
    [0056] As shown in FIG. 7B, a second oxide film [0056] 62 b and a nitride film 63 are successively formed on the semiconductor substrate 60 including the conductive layer pattern 61 and the first oxide film 62 a.
    [0057] FIG. 7C shows that a third oxide film [0057] 62 c is formed on the nitride film 63 including the conductive layer pattern 61 to have an enough thickness to fill the gap between the adjacent conductive layer patterns 61.
    [0058] Thereafter, the third oxide film [0058] 62 c is subjected to anisotropic etching to expose an upper surface of the nitride film 63 on the conductive layer pattern 61. Thus, the third oxide film 62 c between the conductive layer patterns 61 is planarized, as shown in FIG. 7D.
    [0059] As shown in FIG. 7E, a HSG silicon layer [0059] 64 is formed on the planarized surface at about 550 to 600° C. to have a thickness of 500˜2000 Å.
    [0060] The entire surface of the HSG silicon layer [0060] 64 is subjected to anisotropic etching in FIG. 7F. The HSG silicon layer 64, which has irregular size hemispheres and scattered irregularly, is used as a mask in the anisotropic etching. The third oxide film 62 c is etched only at the portions corresponding to the recessed portions of the HSG silicon layer 64 due to different etching rates between the convex portions and the recessed portions of the HSG silicon layer 64. The nitride film 63 acts as an etch stop detection point in the etching process. Accordingly, the third oxide film 62 c is vertically etched until the nitride film 63 is exposed, thereby forming a plurality of holes through the third oxide film 62 c.
    [0061] As shown FIG. 7F, a fourth oxide film [0061] 62 d is formed on the entire surface by chemical vapor deposition to seal the holes in the third oxide film 62 c. Thus, voids 65 filled with air are formed in the insulating layer between the conductive layer patterns 61, surrounded by the nitride film 63, the third oxide film 62 c with holes, and the fourth oxide film 62 d. The voids 65 have a diameter in the range of 250 to 1000 Å.
    [0062] A parasitic capacitance of the semiconductor device in the present invention can be expressed as Cb=S/d because the dielectric constant of air is unity (where Cb=(εS)/d,, ε= 1). When the spaces between the conductive pattern layers are filled with the oxide film, a parasitic capacitance is Cb= (3.85S)/d because the dielectric constant of the oxide is 3.85. Setting that parasitic capacitances of the present invention and the background art are Cb′ and Cb, respectively, and signal voltages of the present invention and the background art are Vs′=(Vd/2)/(1+Cb′/Cs) and Vs= (Vd/2)/(1+Cb/Cs), [0062] Vs Vs ′ =( 1 + Cb / Cs1 + Cb ′ / Cs) - 1 =( Cs + Cb Cs + Cb ′) - 2 =( Cs + Cb Cs + Cb ′) - 1 ≈ ( Cb Cb ′ ) - 1
    [0063] Where, Cb= 3.85 and Cb′=1, the signal voltage of the present invention Vs′ has a value 3.85 times greater than the signal value of the background art Vs. As a result, a sensing capability of the present invention is improved as a shown result. [0063]
    [0064] A wiring in a semiconductor device and a method of fabricating the same in the present invention has the following advantages. [0064]
    [0065] By forming the insulating film having a void in the data line, a parasitic capacitance Cb is much reduced, thereby improving a data sensing capability without increasing a source power voltage Vd and cell capacitance Cs. [0065]
    [0066] In addition, the semiconductor device in the present invention can be operated with a cell capacitor a few times smaller than a current semiconductor device with a cell capacitor due to a reduced parasitic capacitance. [0066]
    [0067] Further, steps or chip size of the semiconductor device is decrease, so that a higher integration is achieved in the present invention. [0067]
    [0068] It will be apparent to those skilled in the art that various modifications and variations can be made in the wiring in a semiconductor device and a method for fabricating the same of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents. [0068]
    权利要求:
    Claims (15)
    [1" id="US-20010003379-A1-CLM-00001] 1. A semiconductor device comprising:
    a semiconductor substrate;
    a plurality of conductive layers on the semiconductor substrate; and
    an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer.
    [2" id="US-20010003379-A1-CLM-00002] 2. The device according to
    claim 1 , wherein the insulating layer has an overhang at an upper portion between each adjacent conductive layer over the void.
    [3" id="US-20010003379-A1-CLM-00003] 3. The device according to
    claim 1 , further comprising an insulating interlayer between the conductive layers and the semiconductor substrate.
    [4" id="US-20010003379-A1-CLM-00004] 4. The device according to
    claim 1 , further comprising a planarization layer on the insulating layer.
    [5" id="US-20010003379-A1-CLM-00005] 5. The device according to
    claim 1 , wherein the void is formed to have a columnar shape perpendicular to the semiconductor substrate.
    [6" id="US-20010003379-A1-CLM-00006] 6. The device according to
    claim 5 , wherein the void is formed to have a diameter in a range of 250 to 1000 Å.
    [7" id="US-20010003379-A1-CLM-00007] 7. A method of fabricating a semiconductor device having a semiconductor substrate, comprising the steps of:
    forming a plurality of conductive layers on the semiconductor substrate; and
    forming an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer.
    [8" id="US-20010003379-A1-CLM-00008] 8. The method according to
    claim 7 , further comprising the step of forming a planarization layer on the insulating layer.
    [9" id="US-20010003379-A1-CLM-00009] 9. The method according to
    claim 8 , the step of forming an insulating layer is executed by a delta-N2O process.
    [10" id="US-20010003379-A1-CLM-00010] 10. The method according to
    claim 8 , the delta-N2O process is carried out by thermal decomposition of Tetra-Ethyl-Ortho-Silicate/O2/N2O.
    [11" id="US-20010003379-A1-CLM-00011] 11. A method of fabricating a semiconductor device having a semiconductor substrate, comprising the steps of:
    forming a plurality of conductive layers on the semiconductor substrate;
    forming an insulating layer on the semiconductor substrate including the conductive layers;
    forming a nitride layer on the insulating layer;
    forming an insulating interlayer on the nitride layer;
    removing the insulating interlayer to expose an upper surface of the nitride layer;
    forming a hemi-spherical grain silicon layer on the insulating interlayer including the upper surface of the nitride layer;
    selectively removing the insulating interlayer using the hemi-spherical grain silicon layer as a mask to form a plurality of void in the insulating interlayer; and
    forming a planarization layer on the insulating interlayer including the nitride layer.
    [12" id="US-20010003379-A1-CLM-00012] 12. The method according to
    claim 11 , wherein the step of forming a hemi-spherical grain silicon layer is performed at a temperature in a range of 550 to 600° C.
    [13" id="US-20010003379-A1-CLM-00013] 13. The method according to
    claim 11 , wherein the hemi-spherical grain silicon layer is formed to have a thickness in a range of 500 to 2000 Å.
    [14" id="US-20010003379-A1-CLM-00014] 14. The method according to
    claim 11 , wherein the step of selectively removing the insulating interlayer includes anisotropic etching.
    [15" id="US-20010003379-A1-CLM-00015] 15. The method according to
    claim 11 , wherein the step of forming a planarization layer is executed by chemical vapor deposition.
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    优先权:
    申请号 | 申请日 | 专利标题
    KR1997/80698||1997-12-31||
    KR19970080698||1997-12-31||
    KR1019980030314A|KR100351888B1|1997-12-31|1998-07-28|Metaline of Semiconductor Device and Method for Manufacturing the Same|
    KR80698/1997||1998-07-28||
    KR1998/30314||1998-07-28||
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